MRF6S18060NR1 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - 225°C Capable Plastic Package - N Suffix Indicates Lead - Free Terminations. Ro HS pliant. - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6S18060N Rev. 4, 12/2008 MRF6S18060NR1 MRF6S18060NBR1 1800- 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060NBR1 Table 1. Maximum Ratings Rating Symbol Value Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDSS VGS Tstg TC TJ - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Characteristic Symbol Value (2,3) Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 77°C, 25 W...